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PIN Diode Chips for Hybrid MIC Switches/Attenuators Technical Data
5082-0001 5082-0012
Features
* Low Series Resistance 0.8 Typical * Nitride Passivated
Outline 01B
5082-0001 D ALL OTHER CHIPS D
X
X
Description
These PIN diode chips are silicon dioxide or nitride passivated. The 5082-0001 has a mesa construction and the 5082-0012 has a planar construction. The fabrication processes are optimized for long term reliability and tightly controlled for uniformity in electrical performance.
X X
Y
Y
DIMENSIONS D 0.03 (1) X 0.05 (2) Y 0.03 (1) Top Contact
PART NO. 50820001 0012 0.06 0.10 (2.5) (4) 0.38 (15) 0.10 (4.0) 0.11 (4.5)
Applications
These general purpose PIN diodes are intended for low power switching applications such as duplexers, antenna switching matrices, digital phase shifters, time multiplex filters, TR switches, pulse and amplitude modulators, limiters, leveling circuits, and attenuators. The 5082-0001 is optimized for applications requiring fast switching.
Au. Cathode Au. Anode
Bottom Contact Au. Anode Au. Cathode Dimensions in millimeters (1/1000 inch)
Maximum Ratings
Junction Operating and Storage Temperature Range ............................................................. -65C to +150C Soldering Temperature 5082-0001 .............................................................. +300C for 1 min. max. 5082-0012 .............................................................. +425C for 1 min. max.
Electrical Specifications at TA = 25C
Chip Part Number 50820001 0012 Nearest Equivalent Packaged Part No. 50823041 3001 Minimum Breakdown Voltage VBR (V) 70 150 VR = VBR Measure IR 10 mA Maximum Junction Capacitance Cj (pF) 0.16* 0.12 VR = 50 V *VR = 20 V f = 1 MHz
Typical Parameters
Typical Series Resistance RS () 0.8* 1.0 IF = 100 mA *IF = 20 mA f = 100 MHz Typical Reverse Recovery Time trr (ns) 5 100 IF = 20 mA VR = 10 V 90% Recovery
Typical Lifetime (ns) 35* 400 IF = 50 mA IR = 250 mA *IR = 6 mA *IF = 10 mA
Test Conditions
Assembly and Handling Procedures for PIN Chips
1. Storage Devices should be stored in a dry nitrogen purged dessicator or equivalent. 2. Cleaning If required, surface contamination may be removed with electronic grade solvents. Typical solvents, such as freon (T.F. or T.M.C.), acetone, deionized water, and methanol, or their locally approved equivalents, can be used singularly or in combinations. Typical cleaning times per solvent are one to three minutes. DI water and methanol should be used (in that order) in the final cleans. Final drying can be accomplished by placing the cleaned dice on clean filter paper and drying with
an infrared lamp for 5-10 minutes. Acids such as hydrofluoric (HF), nitric (HNO3) and hydrochloric (HCl) should not be used. The effects of cleaning methods/ solutions should be verified on small samples prior to submitting the entire lot. Following cleaning, dice should be either used in assembly (typically within a few hours) or stored in clean containers in a reducing atmosphere or a vacuum chamber. 3. Die Attach a. Eutectic 5082-0001 AuSn preform with stage temperature of 300C for one minute max.
5082-0012 AuSn preform with stage temperature of 310C for one minute max. AuGe preform with stage temperature of 390C for one minute max. b. Epoxy For epoxy die-attach, conductive silver-filled or gold-filled epoxies are recommended. This method can be used for all Agilent PIN chips. 4. Wire Bonding Either ultrasonic or thermocompression bonding techniques can be employed. Suggested wire is pure gold, 0.7 to 1.5 mil diameter. Ultrasonic bonding method should be avoided for the 5082-0001 diode chip.
www.semiconductor.agilent.com Data subject to change. Copyright (c) 1999 Agilent Technologies 5965-8880E (11/99)

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